Optics: measuring and testing – Dimension – Length
Reexamination Certificate
2008-08-25
2009-08-11
Toatley, Jr., Gregory J (Department: 2877)
Optics: measuring and testing
Dimension
Length
Reexamination Certificate
active
07573587
ABSTRACT:
A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
REFERENCES:
patent: 2747971 (1956-05-01), Hein
patent: 3740563 (1973-06-01), Reichard
patent: 4926357 (1990-05-01), Katsuoka et al.
patent: 5588993 (1996-12-01), Holder
patent: 5790241 (1998-08-01), Trussell, Jr.
patent: 5846318 (1998-12-01), Javidi
patent: 6077345 (2000-06-01), Easoz et al.
patent: 6106612 (2000-08-01), White
patent: 6454851 (2002-09-01), Fuerhoff et al.
Fuerhoff Robert H.
Holzer Joseph C.
Kimbel Steven L.
Lu Zheng
MEMC Electronic Materials , Inc.
Senniger Powers LLP
Toatley Jr. Gregory J
Underwood Jarreas C
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