Method and device for continuously measuring silicon island...

Optics: measuring and testing – Dimension – Length

Reexamination Certificate

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Reexamination Certificate

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07573587

ABSTRACT:
A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.

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patent: 6077345 (2000-06-01), Easoz et al.
patent: 6106612 (2000-08-01), White
patent: 6454851 (2002-09-01), Fuerhoff et al.

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