Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock
Patent
1991-06-25
1993-08-03
Ng, Jin F.
Electrical transmission or interconnection systems
Personnel safety or limit control features
Interlock
3072966, H03K 301
Patent
active
052332365
DESCRIPTION:
BRIEF SUMMARY
Semiconductor elements, particularly SOI circuits (Silicon on Insulator), are very useful for applications in environments wherein radiation dosages can fall on the semiconductor element. SOI elements in particular are insensitive to short radiation pulses and transient photocurrents because they contain small amounts of silicon. A film of silicon oxide is usually kept as thin as possible so that when it is radiated as little charge carrier as possible is created in the oxide. Semiconductor elements are usually provided with a feedback voltage in order to obtain a suitable operating or threshold voltage of the semiconductor element even in the case of induced charge carriers.
CMOS-SOI technology in particular is being applied more and more for manufacture of circuits wherein high speed is important, such as in oscillators and the like.
With respect to the so-called SIMOX technique wherein oxygen is implanted in silicon, a silicon layer of for instance 100 nm thickness can be obtained.
By making the feedback dependent on the sensed amount of radiation the threshold voltage remains relatively constant at a radiation value of 50-100 krad, which is highly advantageous for instance in space travel.
Further advantages, features and details will become apparent with reference to the drawings, wherein:
FIG. 1 shows a block diagram of a first preferred embodiment according to the present invention;
FIG. 2 is a block diagram of a second preferred embodiment according to the present invention;
FIG. 3 is a circuit diagram of the preferred embodiment of FIG. 2; and
FIG. 4 is a block diagram, similar to FIG. 2, which shows the point of application of a feedback voltage.
In FIG. 1 a voltage emanating from a sensor 1 is compared in a differential amplifier 2 to a reference voltage V.sub.ref and a voltage V.sub.gb is subsequently fed back to the part of the semiconductor element for which drift has to be compensated.
A block diagram in FIG. 2 makes use as radiation-sensitive element onto which radiation R falls of an inverter 3 in SOI (preferably SIMOX) technology, the output of which is compared in a differential amplifier 2' to a reference voltage V.sub.ref whereafter the feedback voltage V.sub.gb is fed back to the backgate of an SOI transistor via a voltage source U of for example minus 10 volts.
FIG. 3 shows a circuit diagram as a preferred embodiment of the block diagram of FIG. 2, wherein the sensor 1 is formed by an N- and P-channel FET and the differential amplifier 2' is likewise formed by a number of P- and N-channel FETs. Via a buffer circuit 4 also consisting of P- and N-channel FETs and the voltage source U the voltage V.sub.fb is fed back to the backgate as indicated schematically with the arrow A.
The semiconductor element according to the present invention can be integrated in simple manner during manufacture of a CMOS circuit; it is however also possible to employ a separate circuit for the feedback.
Simulations using a computer have shown that the threshold voltage V.sub.l of a SOI transistor with both a P-channel and an N-channel FET is stabilized to a considerable extent.
In accordance with the present invention and with reference to FIG. 4, the present invention is directed to a method for compensating for drift occurring in the threshold voltage of a semiconductor element of an integrated semiconductor device 9', in a predetermined region of the semiconductor material thereof. The semiconductor element has a region containing insulating material 10 and a region containing semiconductor material 12. A feedback voltage V.sub.gb is applied via the voltage source U to a backgate region 13 of the semiconductor material which adjoins the insulating region, depending on the amount of detected radiation in the inverter 3.
1. Semiconductor element comprising an SOI circuit including a first region of semiconductor material and a second region of insulating material, and including a third region adjoining said first region of semiconductor material and said second region of insulating material, a sensor for se
REFERENCES:
patent: 3609414 (1971-09-01), Pleshko
Interuniversitair Micro Eleckronica Centrum VZW
Ng Jin F.
Tran Sinh
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