Method and composition for selectively etching against cobalt si

Details Method and composition for selectively etching against cobalt si Method and composition for selectively etching against cobalt si

1997-08-20

2000-06-13

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438754, H01L 21302

Patent

active

060749601

ABSTRACT:
An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. The mineral acid may be selected from the group including HCl, H.sub.2 SO.sub.4, H.sub.3 PO.sub.4, HNO.sub.3, and dilute HF (preferably the mineral acid is HCl) and the peroxide may be hydrogen peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one step process or a two step process. In the one step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide. In the two step process, the regions of cobalt are removed with a first solution containing a mineral acid and a peroxide and the second portions of the metal nitride layer are removed with a second solution containing a peroxide. An etching composition including a mineral acid and a peroxide, preferably, HCl and hydrogen peroxide, is also described. The etching methods and compositions may be used in forming structures such as word lines, gate electrodes, local interconnects, etc.

REFERENCES:
patent: 4528066 (1985-07-01), Merkling et al.
patent: 5010032 (1991-04-01), Tang et al.
patent: 5047367 (1991-09-01), Wei et al.
patent: 5086017 (1992-02-01), Lu
patent: 5163259 (1992-11-01), Kolar et al.
patent: 5198382 (1993-03-01), Campbell et al.
patent: 5302552 (1994-04-01), Duchateau et al.
patent: 5482895 (1996-01-01), Hayashi et al.
patent: 5510292 (1996-04-01), Hayashi
patent: 5567651 (1996-10-01), Berti et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5635426 (1997-06-01), Hayashi et al.
patent: 5736461 (1998-04-01), Berti et al.
patent: 5880033 (1999-03-01), Tsai
Goto et al., "Optimization of Salicide Processes for sub 0.1 -.mu.m CMOS Devices", 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 119-120.
Ohguro et al., "Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide", International Electron Devices Meeting, Washington, D.C., Dec. 10-13, 1995, pp. 10.3.1-10.3.4.

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