Method and composition for restoring dielectric properties...

Semiconductor device manufacturing: process – Repair or restoration

Reexamination Certificate

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C438S694000, C438S787000

Reexamination Certificate

active

07977121

ABSTRACT:
The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.

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