Method and circuit of plasma damage protection

Details Method and circuit of plasma damage protection Method and circuit of plasma damage protection

2006-10-03

2006-10-03

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Miscellaneous

C365S115000, C365S116000

Reexamination Certificate

active

07116606

ABSTRACT:
A protection circuit to discharge plasma-induced charges in a semiconductor device or integrated circuit includes a PMOS transistor and a diode. The PMOS transistor includes a substrate, a drain, a source, and a gate, the source being coupled to receive the plasma-induced charges. The diode has a positive terminal coupled to the substrate of the PMOS transistor and a negative terminal coupled the gate of the PMOS transistor.

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