Method and circuit for substrate current induced hot e-injection

Static information storage and retrieval – Floating gate – Particular biasing

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36518901, 36518527, 365218, G11C 1604

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active

060317663

ABSTRACT:
A method for soft programming memory cells and floating gate memory device. During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source. A circuit for soft programming supplies a gate voltage to the control gate, couples a constant current source to the drain, supplies a well voltage to the well, and supplies a source voltage to the source. The gate voltage may be approximately 2 V, the drain voltage may be approximately 4 V, and the well voltage may be approximately -2 V. According to another embodiment of the invention, the gate voltage is approximately 2 V lower than the drain voltage, and the well voltage is approximately 4 V lower than the gate voltage.

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Hu, C. et al., "Substrate-Current-Induced Hot Electron (SCIHE) injection: a new convergence scheme for flash memory", IEDM 95, IEEE (1995), pp. 283-286.

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