Method and circuit for reducing degradation in a regulated...

Details Method and circuit for reducing degradation in a regulated... Method and circuit for reducing degradation in a regulated...

2006-07-10

2011-11-22

Phan, Huy Q (Department: 2858)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S762010

Reexamination Certificate

active

08063655

ABSTRACT:
A regulated circuit having a number of metal-oxide-semiconductor field effect transistors (MOS FETs) and a method for using the same are provided to reduce Negative Bias Temperature Instability degradation of the MOS FETs on the circuit. In one embodiment, the method involves steps of: (i) detecting degradation in performance of at least one of the MOS FETs causing a shift in threshold voltage (VT) of the MOS FET; and (ii) if the shift in VTexceeds a predetermined value, forward biasing the MOS FETs, thereby reducing or reversing the shift in VT. Optionally, the method includes an initial step of determining if the circuit is in a non-dynamic operating mode before forward biasing the MOS FETs. Other embodiments are also disclosed.

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