Method and circuit for reducing contact resistance of the potent

Details Method and circuit for reducing contact resistance of the potent Method and circuit for reducing contact resistance of the potent

1986-01-09

1987-11-10

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

324158D, G01R 2714

Patent

active

047060158

ABSTRACT:
A method and circuit to enable Four-Point Probe and Spreading Resistance techniques to overcome the high contact resistance in measuring the resistivities of III-V compound semiconductors. This is accomplished by using forward DC bias to greatly reduce the contact resistance of the potential probe to the III-V semiconductor while maintaining the AC input impedance of the potential probe to be several orders of magnitude higher than the DC input resistance, thus enabling use of the AC component to make potential measurements very accurately.

REFERENCES:
patent: 3048776 (1962-08-01), Logan
patent: 3443222 (1969-05-01), Mildwater
Barry et al, Circuit to Facilitate the Measurement by the Four-Probe Method of the Resistivity of Silicon in the Range 0.002 to 10,000 ohm-cm, J. Sci. Instrum., 1962, vol. 39, pp. 119-121.
Allen et al, An AC Silicon Resistivity Meter, the Review of Scientific Instruments, 4-1961.

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