Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver
Reexamination Certificate
1997-06-10
2001-04-03
Wells, Kenneth B. (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Signal converting, shaping, or generating
Current driver
C327S382000, C327S587000
Reexamination Certificate
active
06211706
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention is directed to a method and circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of the output node. It is also directed to an integrated circuit incorporating the circuit, e.g., a circuit integrated on a single silicon chip.
In driver circuits for power transistors, for example, power MOSFETs driving power equipment, the power transistors often switch a large current. The large switching current, combined with forward recovery characteristics of diodes and stray inductance in the circuit, generates a negative spike at the output node of the half bridge. These spike signals can be destructive to the driver circuits and also create noise.
SUMMARY OF THE INVENTION
It is accordingly an object of the present invention to provide a method and circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of the output node.
It is furthermore an object of the present invention to provide such a circuit which can be integrated on a single chip.
The above and other objects of the invention are achieved by a method for driving power transistors in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration comprising arranging first and second power transistors in series in a half bridge configuration with an output node between the transistors; connecting the series transistors between a first voltage source and a common potential; providing a second voltage reference source; providing a terminal connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors; and connecting the second voltage source between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative transients at the output node.
The above and other objects of the invention are also achieved by a circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration, the series transistors being adapted to be connected between a first voltage source and a common potential, the circuit comprising: driver circuits for each of the power transistors, a terminal connected to a common point coupled to anodes of intrinsic diodes of the driver circuits for the power transistors; and the terminal being adapted to be connected to a second voltage source provided between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative transients at the output node.
The above and other objects of the invention are also achieved by a method of integrating on a single integrated circuit chip a circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration comprising:
arranging first and second power transistors in series in a half bridge configuration with an output node between the transistors;
connecting the series transistors between a first voltage source and a common potential;
providing a second voltage reference source;
providing a terminal coupled to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors; and
connecting the second voltage source between said common potential and said terminal so as to shift the level of said common point such that said intrinsic diodes will not forward bias due to negative transients at the output node.
The above and other objects of the invention are also achieved by a circuit integrated on a single integrated circuit chip for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration, the series transistors being adapted to be connected between a first voltage source and a common potential, the circuit comprising:
driver circuits for each of the power transistors;
a terminal connected to a common point coupled to anodes of intrinsic diodes of the driver circuits for the power transistors; and
the terminal being adapted to be connected to a second voltage source provided between said common potential and said terminal so as to shift the level of said common point such that said intrinsic diodes will not forward bias due to negative transients at the output node.
Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
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Choi Chongwook Chris
Tam David C.
International Rectifier Corp.
Ostrolenk Faber Gerb & Soffen, LLP
Wells Kenneth B.
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