Method and circuit for detecting boron ("B") in a semiconductor

Details Method and circuit for detecting boron ("B") in a semiconductor Method and circuit for detecting boron ("B") in a semiconductor

1996-03-28

1998-05-26

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324765, G01R 3126

Patent

active

057572046

ABSTRACT:
A method and circuit for detecting boron at an interface between a p-type polysilicon gate and silicon dioxide gate dielectric is provided. A V.sub.t fluence test using about -6.67 mA/cm.sup.2 is used to detect boron at the interface. A p-channel metal oxide semiconductor ("PMOS") device having a source, drain, substrate, gate and silicon dioxide layer are connected to ground and a current source in order to detect the boron. An about -6.67 mA/cm.sup.2 current is applied to the PMOS gate while the source, substrate and drain are grounded. Various changes in threshold voltages are observed over different stress times. The boron concentration at the polysilicon/gate dielectric interface has been detected by the shift in threshold voltage. The concentration of boron at the interface has been found to degrade oxide quality as evidenced by charge-to-breakdown ("Q.sub.BD ") test of the oxide.

REFERENCES:
patent: 5538904 (1996-07-01), Mitani et al.
patent: 5648288 (1997-07-01), Williams et al.

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