Static information storage and retrieval – Addressing – Sync/clocking
Reexamination Certificate
2005-12-20
2005-12-20
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Addressing
Sync/clocking
C365S230080, C365S233500
Reexamination Certificate
active
06977865
ABSTRACT:
The present invention discloses a method and circuit for controlling an operation mode of a pseudo SRAM (PSRAM), a PSRM having the same, and a method for performing an operation mode thereof. When a clock is toggled and inputted in a synchronous mode in a chip-enabled state, a synchronous write and synchronous read operation is performed, and when the clock is not toggled, an asynchronous write operation is performed. Therefore, the asynchronous write and synchronous read operation and the synchronous write and synchronous read operation can be performed at the same time. Accordingly, an efficient interface is provided between the PSRAM and a NOR flash memory device.
REFERENCES:
patent: 5384737 (1995-01-01), Childs et al.
patent: 6128308 (2000-10-01), Kuo et al.
patent: 6438102 (2002-08-01), Chui et al.
patent: 6532184 (2003-03-01), Chun
patent: 6591354 (2003-07-01), Mick et al.
patent: 2003/0221037 (2003-11-01), Van Dyke et al.
patent: 2004/0081169 (2004-04-01), Kloth et al.
patent: 2004-5683 (2004-01-01), None
Hoang Huan
Hynix / Semiconductor Inc.
LandOfFree
Method and circuit for controlling operation mode of PSRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and circuit for controlling operation mode of PSRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and circuit for controlling operation mode of PSRAM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3508310