Method and circuit for compensating MOSFET capacitance...

Details Method and circuit for compensating MOSFET capacitance... Method and circuit for compensating MOSFET capacitance...

2006-02-21

2006-02-21

Lam, Tuan T. (Department: 2816)

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

C331S10800D, C331S109000

Reexamination Certificate

active

07002421

ABSTRACT:
A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vthwhich accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.

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