Method and circuit for compensating MOSFET capacitance...

Details Method and circuit for compensating MOSFET capacitance... Method and circuit for compensating MOSFET capacitance...

2006-03-07

2006-03-07

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

C327S073000, C331S1070DP

Reexamination Certificate

active

07009429

ABSTRACT:
A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vth which accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method. Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.

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