Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2005-09-06
2005-09-06
Deb, Anjan (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S678000, C324S679000
Reexamination Certificate
active
06940294
ABSTRACT:
A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. The threshold voltage can therefore be used to build a reference voltage Vx+Vthwhich accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.
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W.M. Sansen et al., IEEE Journal of Solid State Circuits, vol. 23, No. 3, Jun. 1988, pp. 821-824.
Ackerman Stephen B.
Deb Anjan
Dialog Semiconductor GmbH
Dole Timothy J.
Saile George D.
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