Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-04-03
2007-04-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185210
Reexamination Certificate
active
11230301
ABSTRACT:
The invention is based on a method for reading out the content of a flash/EEPROM memory cell, in which a read current flowing via a read-out path with a memory cell having a memory transistor is compared with a reference current flowing via at least one read-out path simulation with a reference memory cell that simulates the memory cell and has a reference memory transistor simulating the memory transistor. According to the invention, it is provided that firstly, in a first step, the reference memory transistor is brought to the normally on state provided that the reference memory transistor is not already in the normally on state. In a second step, it is provided that a predetermined reference current is fed into the at least one read-out path simulation. Unlike in the prior art, said reference current is not derived from a reference voltage. In a third step, provision is made for generating, with the aid of the predetermined reference current, a reference voltage that is dependent on the channel resistance of the reference memory transistor. In a fourth step, the reference voltage generated is applied to the gate of the memory transistor and the gate of the reference memory transistor. In a fifth step, the read current flowing through the memory transistor is compared with the predetermined reference current flowing through the reference memory transistor.
REFERENCES:
patent: 5889699 (1999-03-01), Takano
patent: 5966330 (1999-10-01), Tang et al.
patent: 6219277 (2001-04-01), Devin et al.
patent: 6490203 (2002-12-01), Tang
patent: 6643179 (2003-11-01), Campardo et al.
patent: 6735733 (2004-05-01), La Rosa
patent: 2002/0118576 (2002-08-01), Ohba et al.
Elms Richard
Infineon - Technologies AG
Maginot Moore & Beck
Nguyen Hien
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