Method and chip configuration of high temperature pressure conta

Details Method and chip configuration of high temperature pressure conta Method and chip configuration of high temperature pressure conta

1974-11-04

1976-06-01

Wojciechowicz, Edward J.

357 54, 357 55, 357 68, 357 71, 357 79, H01L 2948, H01L 2934, H01L 2348, H01L 2342

Patent

active

039613500

ABSTRACT:
The configuration of the Schottky barrier diode chip described herein is capable of withstanding temperatures on the order of 700.degree.C and pressures commonly developed by a DO-35 semi-conductor package when sealing such chips therein. The chip configurations described herein effectively divert the pressure applied to the chip by the package from the immediate junction area of the diode while at the same time assuring reliable electrical contact without damage to the chip or degradation of electrical characteristics thereof.

REFERENCES:
patent: 3513367 (1970-05-01), Wolley
patent: 3689392 (1972-09-01), Sandera
patent: 3745428 (1973-07-01), Misawa et al.

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