Method and arrangement of a buried capacitor, and a buried capac

Details Method and arrangement of a buried capacitor, and a buried capac Method and arrangement of a buried capacitor, and a buried capac

1998-06-04

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438386, 438391, 438243, H01L 2120

Patent

active

061401994

ABSTRACT:
The present invention relates to a method for arrangement of a buried capacitor on a substrate or the like, and a buried capacitor arranged according to the method. In order to diminish the resistive losses in a capacitor and to make it more efficient, in semi-conductor circuits, instead of the polycrystalline layer, one or more bodies of metal such as aluminum or tungsten may be used. This has been made possible using a new technique in which a trench filling of conducting material is etched away without removal through etching of the insulating layer in the trench. After the removal through etching of the trench filling, the trench is filled using the metal as above, whereby the insulating layer between the conducting material and the metal body will separate two conducting surfaces, thereby forming the buried capacitor.

REFERENCES:
patent: 4656054 (1987-04-01), Inoue
patent: 4990463 (1991-02-01), Mori
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5034341 (1991-07-01), Itoh
patent: 5213999 (1993-05-01), Sparks et al.
patent: 5466628 (1995-11-01), Lee et al.
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 5937296 (1999-08-01), Arnold

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