Method and arrangement for treating silicon plates

Details Method and arrangement for treating silicon plates Method and arrangement for treating silicon plates

1993-11-19

1996-02-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437228, 118725, 156345, H01L 21302

Patent

active

054911125

ABSTRACT:
A method for treating a silicon plate, a so-called wafer, in a cold-wall reactor when using the so-called CVD-technique in order, among other things, to deposit substances on the silicon plate by introducing different gases into the reactor. The reactor is configured as a microwave cavity, and one treatment stage involves introducing microwave energy into the reactor from a microwave generator, thereby to heat the silicon plate to a desired temperature, which is measured in a known manner. According to one preferred embodiment, a suitable etching gas is introduced into the cold-wall reactor, and microwave energy is then introduced into the reactor at a power level such as to form a plasma in the reactor, to thereby back-etch a substrate or to clean the reactor from possible impurities contained therein.

REFERENCES:
patent: 4517026 (1985-05-01), Inoue
patent: 4522149 (1985-06-01), Garbis et al.
patent: 4529621 (1985-07-01), Ballard
patent: 4778559 (1988-10-01), McNeilly

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