Method and arrangement for the response analysis of semiconducto

Details Method and arrangement for the response analysis of semiconducto Method and arrangement for the response analysis of semiconducto

1996-03-14

2000-06-27

Karlsen, Ernest

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324752, G01R 3128, G01R 31308

Patent

active

060811277

ABSTRACT:
The invention is directed to a method and an arrangement for the response analysis of semiconductor materials with optical excitation. The object of the invention, to find a new type of response analysis of semiconductor materials with optical excitation which also allows a sufficiently precise detection of the charge carrier wave with a higher excitation output and a shorter charge carrier lifetime, is met according to the invention in that an exciting laser beam is intensity-modulated with two discrete modulation frequencies (.OMEGA..sub.1 ; .OMEGA..sub.2), the luminescent light exiting from the object is measured on the difference frequency (.OMEGA..sub.1 -.OMEGA..sub.2), and the luminescent light is analyzed as a function of the arithmetic mean (.OMEGA.) of the modulation frequencies (.OMEGA..sub.1 ; .OMEGA..sub.2). The invention is applied in the semiconductor industry for determining different electrical parameters of semiconductor materials.

REFERENCES:
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patent: 5302832 (1994-04-01), Kitagawara et al.
patent: 5408327 (1995-04-01), Geiler et al.
patent: 5490090 (1996-02-01), Ellis
M. Wagner and H.D. Geiler; Single-beam Thermowave Analysis of Ion Implanted and Laser annealed semiconductors; Nov. 1991; pp. 1088-1093.
"Optical Phase Shift Measurement of Carrier Decay-Time on Thin Semiconductor Samples with Surface Losses," Solid-State Electronics, H.R. Zwicker et al., vol. 14, 1971, (month unavailable) pp. 1023-1033.

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