Method and arrangement for predicting thermally-induced...

Details Method and arrangement for predicting thermally-induced... Method and arrangement for predicting thermally-induced...

2006-10-12

2008-12-09

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S302000, C430S311000

Reexamination Certificate

active

07462430

ABSTRACT:
The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.

REFERENCES:
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patent: 4-192317 (1992-07-01), None
Chang et al., Thermomechanical global response of the EUVL wafer during exposure,Proc.SPIEvol. 4688, 755-766 (2002).
European Search Report for EP Appl. No. 06122153.7-2222 issued Jan. 29, 2007.

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