Method and arrangement for drying substrates after treatment in

Details Method and arrangement for drying substrates after treatment in Method and arrangement for drying substrates after treatment in

1998-07-30

2000-10-31

Warden, Jill

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

134 26, 134 32, 134902, 34443, 34444, 34498, B08B 304

Patent

active

061396451

ABSTRACT:
A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (1) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing thereon via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

REFERENCES:
patent: 4643774 (1987-02-01), Kishida et al.
patent: 4722752 (1988-02-01), Steck
patent: 4781764 (1988-11-01), Leenaars
patent: 4828751 (1989-05-01), Kremer
patent: 4902350 (1990-02-01), Steck
patent: 4911761 (1990-03-01), McConnell et al.
patent: 5105556 (1992-04-01), Kurokawa et al.
Koppendink et al, Particle reduction on silicon wafers as a result of isopropyl alcohol displacement drying after wet processing, Particles on Surface 2, pp. 235-243, Plenum Press, 1988.
Leenaars et al, Marangoni Drying: A new Extremely Clean Drying Process, Langmuir, 1990, 6, 1701-1703.
Marra et al, Physical Principles of Marangoni Drying, Langmuir, 1991, 7, 2748-2756.
Handbook of Semiconductor Wafer Technoilogy, Noyes Publications, pp. 24, 25, 414, 598, 1993.

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