Cleaning and liquid contact with solids – Apparatus – With means to movably mount or movably support the work or...
Patent
1992-07-15
2000-01-11
Griffin, Walter D.
Cleaning and liquid contact with solids
Apparatus
With means to movably mount or movably support the work or...
134 254, 134 42, B08B 1300
Patent
active
060124725
ABSTRACT:
A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (3) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).
REFERENCES:
patent: 4577650 (1986-03-01), McConnell
patent: 4633893 (1987-01-01), McConnell et al.
patent: 4643774 (1987-02-01), Kishida et al.
patent: 4722752 (1988-02-01), Steck
patent: 4778532 (1988-10-01), McConnel et al.
patent: 4828751 (1989-05-01), Kremer
patent: 4902350 (1990-02-01), Steck
patent: 4911761 (1990-03-01), McConnell et al.
patent: 5105556 (1992-04-01), Kurokawa et al.
patent: 5129955 (1992-07-01), Tanaka
Leenaars Adriaan F. M.
Van Oekel Jacques J.
Griffin Walter D.
Tierney Daniel E.
U.S. Philips Corporation
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