Thermal measuring and testing – Temperature measurement – In spaced noncontact relationship to specimen
Patent
1994-01-18
1996-10-15
Gutierrez, Diego F. F.
Thermal measuring and testing
Temperature measurement
In spaced noncontact relationship to specimen
374 9, 374142, 364557, 437 8, 356381, G01J 562, G01J 500, G01B 1106
Patent
active
055648304
ABSTRACT:
The invention describes a procedure and an arrangement for measurement of temperature and thickness of layer during a deposition or coating process. As coating or depositing processes known technologies of semi-conductor manufacturing arrangements, plasma devices, ion devices, and other dry-etching arrangements may be used. The invention can also be applied to the manufacture of optical coatings. As a consequence of interference of the thermal radiation of the substrate at the growing layer, the emissivity .epsilon. changes continuously during coating or depositing, therefore, a pyrometric measurement of temperature may not be applied. This basic problem is solved by the invention, which uses a reflectometer, which determines the reflectivity R of the wafer. According to the law of conservation of energy .epsilon.=1-R so that with said reflectometer the actual emissivity of the whole (multi-layer) system may be determined. The measurement of temperature then is effected by means of a determination equation. Concurrently the thickness is determined by a comparison of the reflectometer-curve and a theoretical dependency of thickness of layer.
REFERENCES:
patent: 4417822 (1983-11-01), Stein et al.
patent: 4549079 (1985-10-01), Terasaka, et al.
patent: 4647774 (1987-03-01), Brisk et al.
patent: 4647775 (1987-03-01), Stein
patent: 4919542 (1990-04-01), Nulman et al.
patent: 4956538 (1990-09-01), Moslehi
patent: 4979133 (1990-12-01), Arima et al.
patent: 4984902 (1991-01-01), Crowley et al.
patent: 5029117 (1991-07-01), Patton
patent: 5156461 (1992-10-01), Moleshi et al.
patent: 5180226 (1993-01-01), Moleshi
patent: 5231595 (1993-07-01), Makino et al.
patent: 5239488 (1993-08-01), Markham et al.
patent: 5282017 (1994-01-01), Kasindorf et al.
patent: 5308161 (1994-05-01), Stein
patent: 5326172 (1994-07-01), Ng
patent: 5326173 (1994-07-01), Evans et al.
Chr. M. Van der Meer, et al., "The Emission Coefficient of Silicon Coated th Si.sub.3 N.sub.4 or SiO.sub.2 Layers," J. Appl. Phys., vol. 47, No. 2, 652-655 (Feb. 1976).
D. T. Larson, et al., "Surface Film Thickness Determination By Reflectance Measurements," Appl. Optics, vol. 12, No. 6, 1271-1275 (Jun. 1973).
H. Grothe and F. G. Boebel, "In-situ control of Ga(Al)As MBE layers by pyrometric interferometry," Journal of Crystal Growth, vol. 127, 1010-13 (1993).
Solid State Electronics, 1975, vol. 18, pp. 110-112, M. Sandera "Dialectic Film Thickness Measurement From The Reflection Relations".
Measurement, Mar. 1993, No. 1, pp. 55-64, Chen et al, "Emissivity correction in infrared microthermography".
H. Moller, et al., "Real Time, In Situ, High Resolution Temperature measurement During Film Growth Using multiple Wavelength (HWPI) And Reflexion Supported Pyrometric Interferometry (RSPI)", IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Boston, MA (Sep. 30-Oct. 1, 1993).
E. S. Hellman, et al., "Infrared Transmission Spactroscopy of GaAs During Molecular Beam Epitaxy", J. Cyrs. Grow., 81, 38-42 (1987).
F. G. Boebel, et al., "Simultaneous In Situ Measurement of Film Thickness And Temperature By Using Multiple Wavelenghts Pyrometric Interferometry (MWPI)", IEEE Trans. Semi. Mfg., vol. 6, No. 2 112-118 (1993).
T. Farrell, et al., "Dynamic Optical Reflectivity To Monitor The Real Time Metal Organic Molecular Beam Epitaxial Growth of AlGaAs Layers", Appl. Phys. Lett., 59 (10), 1203-1205 (1991).
Bauer Norbert
Bobel Friedrich
Fraunhofer Gesellschaft zur Forderung der angewandten Forschung
Gutierrez Diego F. F.
LandOfFree
Method and arrangement for determining the layer-thickness and t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and arrangement for determining the layer-thickness and t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and arrangement for determining the layer-thickness and t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1241441