Method and arrangement for controlling focus parameters of...

Details Method and arrangement for controlling focus parameters of... Method and arrangement for controlling focus parameters of...

2007-10-09

2007-10-09

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C382S145000, C382S149000

Reexamination Certificate

active

10798332

ABSTRACT:
A pattern can be projected on a resist film layer deposited on a semiconductor surface. The pattern can include structural elements having different feature sizes. Structural elements having feature sizes below a certain limit are not resolved on the resist film layer. The dimension of the corresponding resist pattern can be reduced and the difference can be related to focus parameters of the exposure tool.

REFERENCES:
patent: 5965309 (1999-10-01), Ausschnitt et al.
patent: 5976740 (1999-11-01), Ausschnitt et al.

Affiliated with

Also associated with

Rating

Method and arrangement for controlling focus parameters of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and arrangement for controlling focus parameters of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and arrangement for controlling focus parameters of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3877265