Metal fusion bonding – Process – Using a compliant cushioning medium
Patent
1991-01-22
1992-10-27
Seidel, Richard K.
Metal fusion bonding
Process
Using a compliant cushioning medium
228243, 228 55, B23K 2002
Patent
active
051582260
ABSTRACT:
The invention is directed to a method wherein pressure is exerted onto a semiconductor surface by a chemically inert and non-solid medium. An opposite pressure is prevented from building up in an intermediate layer, for example, with the assistance of a seal. A connection between the semiconductor and the substrate occurs by pressure sintering or by diffusion welding. A contact between an active, inside region of the semiconductor and a plunger can be avoided since the plunger has a raised and annular outside region for sealing, and the actual pressing power is effected by the pressure medium via a bore situated in the plunger. This raised edge for sealing can also be situated on the semiconductor instead of being situated on the plunger. When a semiconductor component is extrusion-coated with a plastic melt, then this plastic melt itself can serve as a pressure medium.
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Patent Abstracts of Japan; Publication No. 58068942; Takehashi Nobuhaya; "Die Bonding Device", Published Apr. 25, 1983.
Miner James
Seidel Richard K.
Siemens Aktiengesellschaft
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