Method and arrangement for characterizing micro-size patterns

Details Method and arrangement for characterizing micro-size patterns Method and arrangement for characterizing micro-size patterns

1995-02-15

1997-03-04

Huff, Mark F.

Radiation imagery chemistry: process, composition, or product th

Micrography, process, composition, or product other than...

430 30, 356445, 356446, 356448, 356376, 2503411, 25055939, 25055924, 2505592, 382145, 382149, 382151, G01N 2155, G01B 1102

Patent

active

056078005

ABSTRACT:
A method and arrangement for characterizing features of a patterned material on an underlying layer is disclosed. According to the method, the patterned material is subjected to radiation including a range of wavelengths such that the patterned material absorbs more radiation than the underlying layer, and the underlying layer reflects more radiation than the patterned material. Zeroth order reflected radiation is measured and the reflectance measurement is expressed as a spectrum of the intensity of the reflected radiation as a function of the wavelength of the reflected radiation, or as an average reflectance over a range of wavelengths. The reflectance measurement can be correlated with features of the patterned material. An arrangement of equipment is disclosed for characterizing features of a patterned material according to the method.

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Anonymous, "Spectroscopic Pitch Measurement Technique," IBM Technical Disclosure Bulletin, v. 32(4B), Sep. 1989, pp. 391-392.
Anonymous, "Phase-Sensitive Overlay Analysis Spectrometry," IBM Technical Disclosure Bulletin, v. 32(10A), Mar. 1990, pp. 170-174.

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