Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Patent
1998-08-07
2000-06-06
Ham, Seungsook
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
2503418, 324 53, G01R 3128
Patent
active
060721790
ABSTRACT:
A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 .mu.m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.
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Paniccia Mario J.
Rao Valluri R. M.
Yee Wai Mun
Ham Seungsook
Hanig Richard
Intel Corporation
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