Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-08-12
2011-12-20
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170
Reexamination Certificate
active
08081516
ABSTRACT:
With advanced lithographic nodes featuring a half-pitch of 30 nm or less, charge trapping NAND memory has neighboring cells sufficiently close together that fringing fields from a neighboring pass gate interferes with the threshold voltage. The interference results from fringing fields that occupy the gaps that separate the neighboring charge storage structures. The fringing electric fields are suppressed, by the insulating structures having a relative dielectric constant with respect to vacuum that is less than a relative dielectric constant of silicon oxide, from entering the neighboring charge storage structures. In some embodiments, the insulating structures suppress the fringing electric fields from entering a channel region. This suppresses the short channel effects despite the small dimensions of the devices.
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Hsiao Yi-Hsuan
Lee Hang-Ting
Haynes Beffel & Wolfeld LLP
Hoang Huan
Macronix International Co. Ltd.
Suzue Kenta
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