Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-01-24
2006-01-24
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S741000
Reexamination Certificate
active
06989608
ABSTRACT:
The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.
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patent: 6794248 (2004-09-01), Hashimoto et al.
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S. Thomas et al., “Micro-Corrosion of Al-Cu Bonding Pads”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Jun. 1987, vol. CHMT-10, No. 2, pp. 252-257.
Printout: Galvanic Voids, Semiconductor Reliability News, Apr. 1992, 1 page.
Atmel Corporation
Pizarro-Crespo Marcos D.
Schneck Thomas
Schneck & Schneck
Weiss Howard
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