Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-06-06
1998-11-10
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, G01B 1126
Patent
active
058347852
ABSTRACT:
Thermal expansion caused by the absorption of thermal energy from exposure dosages can cause misalignment and other problems in the exposure process. The present invention compensates for this problem by developing scaling and backlash coefficients based on the amount of amount of energy absorbed by the substrate undergoing the exposure process. Scaling and backlash are then compensated for in the alignment map which controls the exposure process. In this fashion, scaling and backlash are accounted for prior to exposure, thus ensuring the proper exposure during the lithography process.
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"A New Analytical Model For Simulating Resist Heating In Electron Beam Lithography", Z. Cui, IOP Publishing, Ltd., 1992, pp. 919-923.
"Computer Simulation Of Resist Heating In Electron-Beam Lithography", Z. Cui, et al., 17 Microelectronic Engineering 395-398 (1992).
"Enhanced Global Alignment For Production Optical Lithography", S. Slonaker, et al., SPIE vol. 922 Optical/Laser Microlithography (1988) pp. 73-81.
FitzGerald Joseph T.
Nguyen Kiet T.
Nikon Corporation
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