Method and apparatus to compensate for thermal expansion in a li

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, G01B 1126

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active

058347852

ABSTRACT:
Thermal expansion caused by the absorption of thermal energy from exposure dosages can cause misalignment and other problems in the exposure process. The present invention compensates for this problem by developing scaling and backlash coefficients based on the amount of amount of energy absorbed by the substrate undergoing the exposure process. Scaling and backlash are then compensated for in the alignment map which controls the exposure process. In this fashion, scaling and backlash are accounted for prior to exposure, thus ensuring the proper exposure during the lithography process.

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patent: 4780747 (1988-10-01), Suzuki et al.
patent: 4908656 (1990-03-01), Suwa et al.
patent: 4962318 (1990-10-01), Nishi
patent: 5118953 (1992-06-01), Ota et al.
patent: 5695894 (1997-12-01), Clube
"A New Analytical Model For Simulating Resist Heating In Electron Beam Lithography", Z. Cui, IOP Publishing, Ltd., 1992, pp. 919-923.
"Computer Simulation Of Resist Heating In Electron-Beam Lithography", Z. Cui, et al., 17 Microelectronic Engineering 395-398 (1992).
"Enhanced Global Alignment For Production Optical Lithography", S. Slonaker, et al., SPIE vol. 922 Optical/Laser Microlithography (1988) pp. 73-81.

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