Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-30
1999-11-02
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438 8, 438694, 438735, 216 61, H01L 2100
Patent
active
059769807
ABSTRACT:
A method and an apparatus providing a mechanical probe structure through the back side of an integrated circuit die. In one embodiment, semiconductor substrate is thinned from the back side of the integrated circuit die above a probe target. The probe target is then exposed and a thin insulating layer is formed over the exposed probe target and the nearby semiconductor substrate. The thin insulating layer provides electrical isolation between the exposed probe target and the bulk semiconductor substrate. The thin insulating layer also provides a base insulating platform for a probe pad that is subsequently deposited. After the insulating layer is formed over the exposed probe target and the nearby semiconductor substrate, the probe target is re-exposed through insulating layer such that a probe pad may be deposited over the probe target to provide electrical contact to the original probe target as well as provide a probe pad for mechanical probing purposes from the back side of the integrated circuit die.
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Livengood Richard H.
Rao Valluri R. M.
Winer Paul
Intel Corporation
Powell William
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