Method and apparatus of terminating a high voltage solid...

Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage

Reexamination Certificate

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C438S529000, C438S551000

Reexamination Certificate

active

06927103

ABSTRACT:
Termination of a high voltage device is achieved by a plurality of discrete deposits of charge that are deposited in varying volumes and/or spacing laterally along a termination region. The manner in which the volumes and/or spacing varies also varies between different layers of a multiple layer device. In a preferred embodiment, the variations are such that the field strength is substantially constant along any horizontal or vertical cross section of the termination region.

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