Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2005-08-09
2005-08-09
Chaudhari, Chandra (Department: 2829)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C438S529000, C438S551000
Reexamination Certificate
active
06927103
ABSTRACT:
Termination of a high voltage device is achieved by a plurality of discrete deposits of charge that are deposited in varying volumes and/or spacing laterally along a termination region. The manner in which the volumes and/or spacing varies also varies between different layers of a multiple layer device. In a preferred embodiment, the variations are such that the field strength is substantially constant along any horizontal or vertical cross section of the termination region.
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Letavic Ted
Simpson Mark
Chaudhari Chandra
Koninklijke Phillips Electronics N.V.
Waxler Aaron
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