Method and apparatus for vapor phase deposition

Details Method and apparatus for vapor phase deposition Method and apparatus for vapor phase deposition

1982-08-04

1985-04-09

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

4272552, 156613, 118900, 148174, 148175, H01L 21365, H01L 21383

Patent

active

045101779

ABSTRACT:
A plurality of wafers on which semiconductor films having a uniform thickness and specific resistivity are obtained by a horizontal type low pressure vapor phase deposition system, i.e., a system using a horizontal reaction tube, in which wafers are aligned in parallel and transverse to a longitudinal axis of the tube. A main gas is introduced from a main inlet into the reaction tube and an auxiliary gas including an impurity gas is introduced from an auxiliary inlet into the reaction tube in such a manner that the impurity gas diffuses toward the main inlet along an inner wall of the reaction tube.

REFERENCES:
patent: 3660179 (1972-05-01), Desmond et al.
patent: 4100310 (1978-07-01), Ura et al.
patent: 4389273 (1983-06-01), Bloem et al.
patent: 4430149 (1984-02-01), Berkman
IBM Technical Disclosure Bulletin, "Insuring Consistent Doping Levels of Epitaxial Layers Grown on Batches of Wafers", vol. 15, No. 11, Apr. 1973, pp. 3550-3551.
IBM Technical Disclosure Bulletin, "Improving Resistivity and Thickness Uniformity of Epitaxial Deposits", vol. 13, No. 12, May 1971, p. 3887.

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