Method and apparatus for using cobalt silicided...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

Reexamination Certificate

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C257S528000, C257S529000, C438S132000, C438S215000

Reexamination Certificate

active

10675555

ABSTRACT:
A fusible link formed on a semiconductor substrate. The fusible link comprises a silicide layer overlying a polysilicon layer. The fusible link is programmed to an open state by passing a current therethrough that opens the polysilicon and the silicide layers.

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