Method and apparatus for use of III-nitride wide bandgap...

Optical: systems and elements – Optical amplifier – Particular active medium

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C385S008000, C385S040000, C438S031000, C438S604000

Reexamination Certificate

active

07345812

ABSTRACT:
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 5909303 (1999-06-01), Trezza et al.
patent: 6140669 (2000-10-01), Lozykowski et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6456429 (2002-09-01), Wu
patent: 6630693 (2003-10-01), Martin et al.
patent: 6687461 (2004-02-01), MacFarlane et al.
patent: 6909536 (2005-06-01), Walker et al.
patent: 2002/0094002 (2002-07-01), Amano et al.
patent: 2003/0017625 (2003-01-01), Litvin
patent: 2003/0021014 (2003-01-01), Barenburg et al.
Long et al., “GaN linear electro-optic effect”, Applied Physics Letters, vol. 67, (Sep. 4, 1995), pp. 1349-1351.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for use of III-nitride wide bandgap... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for use of III-nitride wide bandgap..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for use of III-nitride wide bandgap... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3980439

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.