Optical: systems and elements – Optical amplifier – Particular active medium
Reexamination Certificate
2004-02-20
2008-03-18
Hughes, Deandra M. (Department: 3663)
Optical: systems and elements
Optical amplifier
Particular active medium
C385S008000, C385S040000, C438S031000, C438S604000
Reexamination Certificate
active
07345812
ABSTRACT:
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 5909303 (1999-06-01), Trezza et al.
patent: 6140669 (2000-10-01), Lozykowski et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6456429 (2002-09-01), Wu
patent: 6630693 (2003-10-01), Martin et al.
patent: 6687461 (2004-02-01), MacFarlane et al.
patent: 6909536 (2005-06-01), Walker et al.
patent: 2002/0094002 (2002-07-01), Amano et al.
patent: 2003/0017625 (2003-01-01), Litvin
patent: 2003/0021014 (2003-01-01), Barenburg et al.
Long et al., “GaN linear electro-optic effect”, Applied Physics Letters, vol. 67, (Sep. 4, 1995), pp. 1349-1351.
Hui Rongqing
Jiang Hong-Xing
Lin Jing-Yu
Bianchi Timothy E.
Bolda Eric
Hughes Deandra M.
Schwegman Lundberg & Woessner, P.A.
University of Kansas
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