Method and apparatus for uniform semiconductor material processi

Details Method and apparatus for uniform semiconductor material processi Method and apparatus for uniform semiconductor material processi

1993-08-31

1996-06-11

Leung, Philip H.

Electric heating

Inductive heating

With heat exchange

219635, 219632, 219652, 118725, 118728, H05B 610

Patent

active

055257801

ABSTRACT:
A multipurpose chuck apparatus (100) has a chamber (112) for holding a medium (114). The medium (114) is heated into a high temperature molten state by a radio frequency induction heating coil (130). The medium (114) heats up a semiconductor material (118) through a chuck member (116) that separates the medium (114) from the semiconductor material (118). The heating performed by the radio frequency induction heating coil (130) generates a fluid flow within the medium (114), providing a uniform temperature distribution throughout the medium (114). A magnetic rotation device (121) controls movement of rotating member (128) having a mixing member (122) and rotating fins (184) to ensure complete uniform temperature distribution throughout the medium (114), especially in the vicinity of the chuck member (116). An inlet cooling tube (122) and an outlet cooling tube (124), isolated from the medium (114) provide cooling fluid to the chuck member (116) for temperature control of the semiconductor material (118).

REFERENCES:
patent: 3911859 (1975-10-01), Dudko et al.
patent: 4778559 (1988-10-01), McNeilly
patent: 4798926 (1989-01-01), Sakai
patent: 4891335 (1990-01-01), McNeilly
patent: 4956046 (1990-09-01), McNeilly
patent: 5025133 (1991-06-01), Tsutahara et al.
patent: 5238177 (1993-08-01), Nakulski et al.
patent: 5350902 (1994-09-01), Fox et al.

Affiliated with

Also associated with

Rating

Method and apparatus for uniform semiconductor material processi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for uniform semiconductor material processi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for uniform semiconductor material processi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-353278