Method and apparatus for ultrasonic wet etching of silicon

Details Method and apparatus for ultrasonic wet etching of silicon Method and apparatus for ultrasonic wet etching of silicon

1998-08-27

2000-09-26

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438746, 438753, H01L 21302

Patent

active

061242144

ABSTRACT:
Methods of forming substantially defect-free silicon structures at the submicron level by enhancing microscopic etchant concentration uniformity and reducing hydrogen bubble adhesion. Etchant mixtures are subjected to the application of ultrasonic waves. The ultrasonic waves promote cavitation that mixes the etchant mixture on a microscopic level, and also assists in promoting bubble detachment. Wetting agents are added to the etchant mixture to enhance the hydrophilicity of the silicon surfaces and thereby reduce bubble adhesion. Apparatus to carry out the method of forming silicon structures are also disclosed.

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