Coating apparatus – Gas or vapor deposition
Patent
1996-08-08
1999-07-27
Breneman, Bruce
Coating apparatus
Gas or vapor deposition
118724, 553851, 553852, 554344, 55440, 55442, 55443, 156345, L23C 1600
Patent
active
059284269
ABSTRACT:
A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.
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Breneman Bruce
Lund Jeffrie R
Novellus Systems Inc.
Saxon Roberta P.
Steuber David E.
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