Method and apparatus for treating a substrate surface by...

Details Method and apparatus for treating a substrate surface by... Method and apparatus for treating a substrate surface by...

2007-04-10

2007-04-10

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S745000, C430S329000, C134S001300

Reexamination Certificate

active

10702442

ABSTRACT:
The present invention discloses a technique of removing a substance from a substrate surface, such as stripping photoresist from a wafer, or forming a substance on a substrate surface. Substrates to be treated are parallel arranged at an equal interval and are immersed in a liquid with only a lower portion thereof being below the liquid surface. Gas such as ozone is introduced into the liquid and is continuously bubbling below the substrates. The bubbles will ascend between two adjacent substrates and climb on the surfaces of the substrates before they burst. The liquid boundary layers on the substrate surfaces are compressed and refreshed in the course of a dragging ascent of the bubbles, enhancing mass transfer between gas/liquid/solid substances across the liquid boundary layer, thereby resulting in a fast reaction and a fast treatment of the surface of the substrates.

REFERENCES:
patent: 5378317 (1995-01-01), Kashiwase et al.
patent: 6517998 (2003-02-01), Noda et al.
patent: 6558477 (2003-05-01), Scovell
patent: 6622738 (2003-09-01), Scovell
patent: 6696228 (2004-02-01), Muraoka et al.
patent: 2002/0011257 (2002-01-01), Degendt et al.

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