Method and apparatus for transferring a thin layer of...

Details Method and apparatus for transferring a thin layer of... Method and apparatus for transferring a thin layer of...

2005-12-27

2005-12-27

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S473000, C438S526000

Reexamination Certificate

active

06979630

ABSTRACT:
The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6368938 (2002-04-01), Usenko

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