Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2011-07-05
2011-07-05
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S008000, C438S459000, C438S695000
Reexamination Certificate
active
07972969
ABSTRACT:
A method is provided for controlling substrate thickness. At least one etchant is dispensed from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching. A thickness of the spinning substrate is monitored at the plurality of locations, so that the thickness of the substrate is monitored at each individual location while dispensing the etchant at that location. A respective amount of etching performed at each individual location is controlled, based on the respective monitored thickness at that location.
REFERENCES:
patent: 5089305 (1992-02-01), Ushijima et al.
patent: 5268065 (1993-12-01), Grupen-Shemansky
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5748296 (1998-05-01), Canteloup
patent: 6149759 (2000-11-01), Guggenberger
patent: 6383331 (2002-05-01), Sumnitsch
patent: 6494221 (2002-12-01), Sellmer et al.
patent: 6589855 (2003-07-01), Miyamoto et al.
patent: 2002/0153030 (2002-10-01), Chooi et al.
patent: 2004/0004724 (2004-01-01), Kim et al.
patent: 2007/0175500 (2007-08-01), Hohenwarter
patent: 2008/0315349 (2008-12-01), Takei et al.
patent: 1452018 (2003-10-01), None
Official Action issued on Jul. 19, 2010 in counterpart Chinese application.
Chiou Wen-Chih
Wu Weng-Jin
Yang Ku-Feng
Zuo Kewei
Duane Morris LLP
Koffs Steven E.
Landau Matthew C
McCall Shepard Sonya D
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
Method and apparatus for thinning a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for thinning a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for thinning a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2655010