Method and apparatus for the selective, self-aligned deposition

Details Method and apparatus for the selective, self-aligned deposition Method and apparatus for the selective, self-aligned deposition

1984-09-10

1986-02-11

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1400, C23C 1434, C23C 1446

Patent

active

045697434

ABSTRACT:
A method and apparatus for the selective deposition of metal layers on a substrate. At least one metal layer is deposited in a self-aligned manner on conductive regions on the surface of isolating or semiconductive substrates, for which purpose the conductive regions are arranged facing a metal plate having at least one layer of the metal to be deposited, and Tesla currents are generated between the metal plate and the regions to be coated. The apparatus for implementing the method includes a metal plate, a Tesla transformer which is coupled to the metal plate or to a metal grid, spaced apart from the surface of the metal plate away from the conductive regions, having closely adjacent and regularly distributed spikes pointing towards the metal. This method may be used, for example, to produce conductors on or in ceramic modules, circuit cards and semiconductor elements.

REFERENCES:
patent: 3321390 (1967-05-01), Weber
patent: 3707452 (1972-12-01), Lester et al.
patent: 3986944 (1976-10-01), Gould
patent: 4013830 (1977-03-01), Pinch et al.
Robert W. Berry et al., "Thin Film Technology", pp. 216-219, (1968).
John L. Vossen et al., "Thin Film Processes", pp. 11-36, (1978).

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