Abrading – Abrading process
Patent
1992-09-01
1994-10-04
Lavinder, Jack W.
Abrading
Abrading process
451 69, 125 1302, 125 21, B24B 100
Patent
active
053514467
ABSTRACT:
Ingot-type semiconductor single crystals having diameters of more than 200 m can be sawed into thin wafers using an annular saw if the crystal is fed towards the cutting edge of the annular saw while rotating around its longitudinal axis. The method includes having a wafer sawed out in this way until a residual joint is created between a wafer and the end face of the ingot. Ingot and wafer are finally separated by means of a residue separation technique which leaves behind various central material projections on the ingot and the wafer. Particularly suitable for residue separation are torsion separation and separation by a wire saw. This procedure reliably prevents the frequently observable, uncontrollable breaking-off of the wafer in the final phase of the annular sawing if this is exclusively used as the method of separation. The method, whose final step involves the removal of the material projection on the wafer by rotation grinding, proves to be particularly suitable for crystals having diameters of more than 200 mm. In this case, the material saving is exceedingly high as a result of the absence of chips from the ingot or wafer as a consequence of uncontrolled breaking-off of the wafer.
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Lavinder Jack W.
Wacker-Chemtronic Gesellschaft fur Elecktronik-Grundstoffe mbH
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