Method and apparatus for the production of SiC whisker

Details Method and apparatus for the production of SiC whisker Method and apparatus for the production of SiC whisker

1990-12-05

1992-02-11

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, C01B 21068, C30B 29062

Patent

active

050874330

ABSTRACT:
In the production of SiC whisker for composite materials such as FRP, FRM, FRC and the like by vapor phase synthesis between silicon sulfide and carbon compound, SiC whisker suitable for the continuation and mass production is produced in industrial scale by using metallic Si as a starting material through a stage of contacting the metallic silicon with hydrogen sulfide gas to produce silicon sulfide gas, and a stage of contacting the silicon sulfide gas with carbon compound and, if necessary, a formed nucleus to deposit and grow whisker.

REFERENCES:
patent: 3209981 (1973-01-01), Lee et al.
patent: 3933984 (1976-01-01), Kimura et al.
patent: 4552740 (1985-11-01), Morgan et al.
patent: 4640830 (1987-02-01), Arakawa
patent: 4789537 (1988-12-01), Shalek et al.
patent: 4855119 (1989-08-01), Minamikata et al.

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