Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-03-22
2005-03-22
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S022000, C438S034000, C438S044000
Reexamination Certificate
active
06869806
ABSTRACT:
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.
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USPTO Office Action dated Nov. 12, 2004.
Cui Yongjie
Li Lian
Everhart Caridad
Quarles & Brady LLP
Rocchegiani Renzo N.
WiSys Technology Foundation Inc.
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