Method and apparatus for the molecular identification of defects

Details Method and apparatus for the molecular identification of defects Method and apparatus for the molecular identification of defects

1998-10-23

2000-05-23

Hantis, K. P.

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

356301, G01N 2100

Patent

active

060671548

ABSTRACT:
A method and apparatus are provided for obtaining molecular information about materials at a selected site on or in a semiconductor topography. In a preferred embodiment, the selected site is a defect from a defect map generated by an automated wafer inspection system. A sample stage and drive/alignment system are used to move the semiconductor topography such that a selected defect is aligned with the illumination provided by a radiation scattering measurement system. A Raman spectroscopy system may be used for the radiation scattering measurement. The intensity and frequency of inelastically scattered radiation from the vicinity of the selected defect is compared to standard spectra to determine the chemical composition and material phase of the region analyzed. The depth into the topography probed may be adjusted by changing the wavelength of radiation used in the Raman spectroscopy measurement. In this way, the source of a particular defect, even if buried in the topography during the semiconductor fabrication process, may be determined. Knowledge of the fabrication process guides selection of the appropriate depths to be analyzed.

REFERENCES:
patent: 4978862 (1990-12-01), Silva et al.
patent: 5208648 (1993-05-01), Batchelder et al.
Clark et al. "Dynamic . . . Inspection", J. Vac. Sci Technol. B 10(6) Nov. 12, 1992 pp. 2638-2642.
Skoog et al., "Raman Spectroscopy," Principles of Instrumental Analysis, 5th Ed., Chapter 18, 1992.

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