Method and apparatus for the growth of a single crystal

Details Method and apparatus for the growth of a single crystal Method and apparatus for the growth of a single crystal

1997-09-25

1999-09-14

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117201, 117202, 117204, 117 31, C30B 2300

Patent

active

059517581

ABSTRACT:
According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.

REFERENCES:
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patent: 4874458 (1989-10-01), Nishizawa
patent: 5394830 (1995-03-01), Azad
patent: 5471943 (1995-12-01), Scheel
patent: 5690731 (1997-11-01), Kurata et al.
In-Situ Observation of Solid-Liquid Interface Shape by X-Ray Radiography During Silicon Single Crystal Growth, 2300 Journal of Crystal Growth 91 (1988) Sep., No. 4, Amsterdam, The Netherlands.

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