Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-06-26
2007-06-26
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S306000, C250S307000, C250S309000, C250S3960ML, C250S397000, C250S42300F, C250S424000, C250S492100, C250S492300
Reexamination Certificate
active
10995370
ABSTRACT:
An apparatus for the generation of anionic and neutral particulate beams is described. The apparatus comprises a duct defined by walls having an inner surface capable of sustaining a temperature above an electron emission temperature of the surface, so as to negatively charge electrically neutral particles being passed through the duct when the surface is heated to the temperature; a heating element for heating the inner surface to the temperature; and an acceleration electrode for ion-optically controlling and manipulating the negatively charged particles into the anion beam. The apparatus may further comprise a protection electrode defining a protected region, which substantially prevent emitted electrons from escaping the protected region. Moreover, a system for analyzing substances ejected from a surface of a sample bombarded with an anion beam generated by the apparatus is described. The system further comprises a detector for detecting the substances once ejected of the surface. Further, a method of generating an anion beam is described.
REFERENCES:
patent: 4564758 (1986-01-01), Slodzian et al.
patent: 4611120 (1986-09-01), Bancroft et al.
patent: 4740697 (1988-04-01), Suzuki
patent: 4967078 (1990-10-01), Purser
patent: 4968888 (1990-11-01), Appelhans et al.
patent: 5359254 (1994-10-01), Arkhipov et al.
patent: 6303932 (2001-10-01), Hamamura et al.
patent: 2006/0118405 (2006-06-01), Kolodney et al.
patent: 2386747 (2003-09-01), None
Bekkerman et al. “Thermally Activated Decay Channels of Superhot C-60: Delayed Electron Emission and Dissociative Attachment Studied by Hyperthermal Negative Surface Ionization”, International Journal of Mass Spectrometry, 185/186/187: 773-786, 1999.
Vakar et al. “Growth of Crystallites Consisting of C60 Molecules on Heated (100)Mo”, JETP Letters, 67(12): 1024-1028, 1998.
Wong et al. “Development of A C60+ Ion Gun for Static SIMS and Chemical Imaging”, Applied Surface Science, 203-204: 219-222, 2003.
Budrevich et al. “Critical Behaviour of Super-Heated (1900-2000 K) C60 Vapours”, J. Phys. B: At. Mol. Opt. Phys., 29: 4965-4974, 1996.
Horak et al. “Broad Fullerene-Ion Beam Generation and Bombardment Effects”, Appl. Phys. Lett., 65(8): 968-970, 1994.
Bekkerman et al. “Above the Surface Multifragmentation of Surface Scattered Fullerenes”, Journal of Chemical Physics, 120(23): 11026-11030, 2004.
Matej{hacek over (c)}ik et al. “Formation and Decay of C-60 Following Free Electron Capture by C60”, Journal of Chemical Physics, 102(6): 2516-2521, 1995.
Baudin et al. “A Spontaneous Desorption Source for Polyatomic Ion Production”, Rapid Communications in Mass Spectrometry, 12: 852-856, 1998.
Biri et al. “Production of Multiply Charged Fullerene and Carbon Cluster Beams by the ECR Ion Source”, Rev. Sci. Instr., 73(2): 65, 2002.
Weibel et al. “A C60 Primary Ion Beam System for Time of Flight Secondary Ion Mass Spectrometry: Its Development and Secondary Ion Yield Characteristics”, Analytical Chemistry, 75(7): 1754-1764, 2003.
Bekkerman Anatoly
Kolodney Eli
Tsipinyuk Boris
Souw Bernard
Technion Research & Development Foundation Ltd.
Wells Nikita
LandOfFree
Method and apparatus for the generation of anionic and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for the generation of anionic and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for the generation of anionic and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3819203