Method and apparatus for the deposition of parylene AF4 onto sem

Coating processes – Coating by vapor – gas – or smoke – Organic coating applied by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427299, 4273855, 437243, C23C 1600

Patent

active

055387586

ABSTRACT:
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.

REFERENCES:
patent: 3246627 (1966-04-01), Loeb
patent: 4495889 (1985-01-01), Riley
patent: 4683143 (1987-07-01), Riley
patent: 4945856 (1990-08-01), Stewart

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for the deposition of parylene AF4 onto sem does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for the deposition of parylene AF4 onto sem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for the deposition of parylene AF4 onto sem will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-711503

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.