X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Reexamination Certificate
2005-06-14
2005-06-14
Glick, Edward J. (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
C378S073000
Reexamination Certificate
active
06907107
ABSTRACT:
A method is provided of analysing the composition of a semiconductor material (3) comprising irradiating the material with energy from an energy source (1) which energy is diffracted from the material, detecting one or more portions of the diffracted energy, and analysing the or each detected portion to obtain a parameter indicative of the intensity of the or each portion. The or each portion of the diffracted energy detected may be a quasi-forbidden reflection diffracted from the material, e.g. may be a (002) reflection diffracted from the material, or a (006) reflection. The detection of the or each portion of the diffracted energy may take place at one or more detection angles (9), or at all angles of reflection/transmission of the diffracted energy source, or at a range of angles around one or more detection angles. The energy source may comprise a beam of x-rays produced by an x-ray tube (2), and one or more detectors (4) may be used to detect the or each portion of the diffracted energy.
REFERENCES:
patent: 4144450 (1979-03-01), Goebel
patent: 4575922 (1986-03-01), Nemiroff
patent: 4928294 (1990-05-01), Beard, Jr. et al.
patent: 5148458 (1992-09-01), Ruud
patent: 5414747 (1995-05-01), Ruud et al.
patent: 5457727 (1995-10-01), Frijlink
patent: 5530732 (1996-06-01), Takemi
patent: 5787145 (1998-07-01), Geus
patent: 6072853 (2000-06-01), Hall
patent: 6577705 (2003-06-01), Chang et al.
patent: 270 770 (1989-08-01), None
patent: 0 186 924 (1986-07-01), None
patent: 0 354 045 (1990-02-01), None
patent: 2 166 630 (1986-05-01), None
patent: 2 169 480 (1986-07-01), None
patent: 2 289 833 (1995-11-01), None
patent: WO 97/12234 (1997-04-01), None
C. Kittel, “Introduction to Solid State Physics” 3rdEdition (2ndprinting), Nov. 1967, pp. 40-42.
A. Mazuelas et al, “Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors”Journal of Crystal Growth,vol. 175/176, No. 3001, May 1997, pp. 383-386.
P. Velling et al, “InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport”Journal of Crystal Growth,vol. 195, No. 1-4, Dec. 1998, pp. 117-123.
Emeny Martin T.
Keir Andrew M.
Wallis David J.
Glick Edward J.
QinetiQ Limited
Song Hoon
LandOfFree
Method and apparatus for the analysis of material composition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for the analysis of material composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for the analysis of material composition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3516784